2002. 7. 10
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SEMICONDUCTOR
TECHNICAL DATA
KRC416~KRC422
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
DIM
MILLIMETERS
A
B
D
E
1. EMITTER
2. BASE
3. COLLECTOR
USM
2.00 0.20
1.25 0.15
0.90 0.10
0.3+0.10/-0.05
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
C
G
H
J
K
L
K
1
3
2
E
B
D
A
J
G
C
L
H
M
M
N
N
M
0.42 0.10
N
0.10 MIN
+
_
+
_
+
_
+
_
+
_
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
MARK SPEC
R1
R2
COMMON
OUT
IN
Type Name
Marking
TYPE NO.
R1(k )
R2(k )
KRC416
1
10
KRC417
2.2
2.2
KRC418
2.2
10
KRC419
4.7
10
KRC420
10
4.7
KRC421
47
10
KRC422
100
100
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRC416~422
V
O
50
V
Input Voltage
KRC416
V
I
10, -5
V
KRC417
12, -10
KRC418
12,-5
KRC419
20, -7
KRC420
30, -10
KRC421
40, -15
KRC422
40, -10
Output Current
KRC416~422
I
O
100
mA
Power Dissipation
P
D
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
KRC416
KRC417
KRC418
KRC419
KRC420
KRC421
KRC422
MARK
N2
N4
N5
N6
N7
N8
N9